Thermally stable Schottky contacts on n-type GaN using ZrB2

Thermally stable Schottky contacts on n-type GaN using ZrB2

The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...

Thermally stable, oxidation resistant capping technology for TiÕAl ohmic contacts to n-GaN

The intermetallic TiAl3 has been used as a thermally stable cap for Ti/Al ohmic contacts to n-GaN. The electrical performance of the TiAl3-capped contact is nearly the same as that of a standard Ti/Al/Ni/Au contact processed on the same substrate, but the Ti/Al/TiAl3 contact’s performance is optimized at a much lower temperature. The Ti/Al/TiAl3 contact achieved a lowest specific contact resist...

Metal contacts to n-GaN

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 8C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current–voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloyin...

Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts